Effect of undepleted high-resistivity region on microwave efficiency of GaAs IMPATT diodes

Degradation of the microwave efficiency due to the undepleted high-resistivity epitaxial region was experimentally found to be remarkably, small on GaAs X-band conventional-type IMPATT diodes. The result seems to be consistent with large low-field drift mobility for electrons in GaAs. Present study...

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Bibliographic Details
Published in:Proceedings of the IEEE 1975-01, Vol.63 (4), p.724-726
Main Authors: Aono, Y., Okuto, Y.
Format: Article
Language:English
Subjects:
Degradation
Gallium arsenide
Integrated circuit technology
Isolation technology
Leakage current
Metallization
Microwave transistors
Monolithic integrated circuits
Ohmic contacts
Schottky diodes
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Summary:Degradation of the microwave efficiency due to the undepleted high-resistivity epitaxial region was experimentally found to be remarkably, small on GaAs X-band conventional-type IMPATT diodes. The result seems to be consistent with large low-field drift mobility for electrons in GaAs. Present study confirms the superiority of n-GaAs over other materials for IMPATT diode use.
ISSN:0018-9219
1558-2256
DOI:10.1109/PROC.1975.9813