Emerging silicon carbide power electronics components

Power electronics engineers seek to optimize the performance of their circuits and systems to maximize efficiency, reduce size and cost, and perfect power quality. To support this, the developers of power electronics components have driven the performance of the underlying silicon-based switches and...

Full description

Saved in:
Bibliographic Details
Main Author: Zolper, J.C.
Format: Conference Proceeding
Language:English
Subjects:
Circuits and systems
Cost function
Performance loss
Power electronics
Power engineering and energy
Power quality
Semiconductor diodes
Silicon carbide
Switches
Switching loss
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Power electronics engineers seek to optimize the performance of their circuits and systems to maximize efficiency, reduce size and cost, and perfect power quality. To support this, the developers of power electronics components have driven the performance of the underlying silicon-based switches and diodes to reduce on-state and switching losses, increase frequency of operation, and expand the integration of control electronics. However, some silicon power electronics components are facing fundamental limits in performance that may not support future system requirements. This paper describes the emergence of a new class of power electronics components based on the wide bandgap semiconductor silicon carbide (SiC) that will extend the design space for future power electronic engineers
ISSN:1048-2334
2470-6647
DOI:10.1109/APEC.2005.1452877