A 243-GHz F/sub t/ and 208-GHz F/sub max/, 90-nm SOI CMOS SoC technology with low-power mm-wave digital and RF circuit capability

A 90-nm silicon-on-insulator (SOI) CMOS system on-chip integrates high-performance FETs with 243-GHz F/sub t/, 208-GHz F/sub max/, 1.45-mS//spl mu/m gm, and sub 1.1-dB NFmin up to 26 GHz. Inductor Q of 20, VNCAP of 1.8-fF//spl mu/m/sup 2/, varactor with a tuning range as high as 25:1, and a low-loss...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2005-07, Vol.52 (7), p.1370-1375
Main Authors: Plouchart, J.-O., Zamdmer, N., Jonghae Kim, Trzcinski, R., Narasimha, S., Khare, M., Wagner, L.F., Sweeney, S.L., Chaloux, S.
Format: Article
Language:English
Subjects:
CMOS integrated circuits
Distributed amplifier
Distributed amplifiers
divider
high-speed circuits
Millimeter wave integrated circuits
RF circuits
Silicon on insulator technology
silicon-on-insulator (SOI) CMOS
system-on-chip (SoC)
Transmission lines
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Summary:A 90-nm silicon-on-insulator (SOI) CMOS system on-chip integrates high-performance FETs with 243-GHz F/sub t/, 208-GHz F/sub max/, 1.45-mS//spl mu/m gm, and sub 1.1-dB NFmin up to 26 GHz. Inductor Q of 20, VNCAP of 1.8-fF//spl mu/m/sup 2/, varactor with a tuning range as high as 25:1, and a low-loss microstrip. Transmission lines were successfully integrated without extra masks and processing steps. SOI and its low parasitic junction capacitance enables this high level of performance and will expand the use of CMOS for millimeter-wave applications.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2005.850638