Switching of magnetostrictive micro-dot arrays by mechanical strain

CoFeBSi and FeCo magnetostrictive micro-and nano-dot arrays are fabricated on Si/sub 3/N/sub 4/ membranes with different diameters (50 to 300 /spl mu/m) by combining MEMS fabrication processes and thin film technology. Compressive or tensile mechanical strain is introduced in order to observe the in...

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Bibliographic Details
Main Authors: Bootsmann, M.-T., Dokupil, S., Quandt, E., Ivanov, T., Abedinov, N., Lohndorf, M.
Format: Conference Proceeding
Language:English
Subjects:
Amorphous magnetic materials
Biomembranes
Fabrication
Magnetic field induced strain
Magnetic switching
Magnetostriction
Micromechanical devices
Semiconductor thin films
Strain measurement
Tensile strain
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Summary:CoFeBSi and FeCo magnetostrictive micro-and nano-dot arrays are fabricated on Si/sub 3/N/sub 4/ membranes with different diameters (50 to 300 /spl mu/m) by combining MEMS fabrication processes and thin film technology. Compressive or tensile mechanical strain is introduced in order to observe the inverse magnetostriction effect or the Villary effect. Magnetic force microscopy and MOKE measurements are employed in order to investigate the strain induced switching properties and resolve the domain structure of the amorphous micro- and nano-dot arrays. The local strain distribution of the various membrane structures is obtained by finite-element method. The results of the simulations are then compared to the experimental results.
ISSN:2150-4598
2150-4601
DOI:10.1109/INTMAG.2005.1464409