Noise properties of magnetic tunnel junctions

Magnetron sputtering was used to prepare the magnetic tunnel junction (MTJ) with the stacking structure SiO/sub 2//Ta(3 nm)/Ni/sub 80/Fe/sub 20/(3 nm)/Cu(20 nm)/Ni/sub 80/Fe/sub 20/(3 nm)/IrMn(10 nm)/Co/sub 75/Fe/sub 25/(5 nm)/Al(0.8 nm)-oxide/Co/sub 75/Fe/sub 25/(5 nm)/Ni/sub 80/Fe/sub 20/(20 nm)/T...

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Bibliographic Details
Main Authors: Md Nor, A.F., Ando, Y., Mochizuki, N., Miyazaki, T.
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Frequency measurement
Iron
Magnetic field measurement
Magnetic noise
Magnetic properties
Magnetic tunneling
Sputtering
Stacking
Temperature dependence
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Summary:Magnetron sputtering was used to prepare the magnetic tunnel junction (MTJ) with the stacking structure SiO/sub 2//Ta(3 nm)/Ni/sub 80/Fe/sub 20/(3 nm)/Cu(20 nm)/Ni/sub 80/Fe/sub 20/(3 nm)/IrMn(10 nm)/Co/sub 75/Fe/sub 25/(5 nm)/Al(0.8 nm)-oxide/Co/sub 75/Fe/sub 25/(5 nm)/Ni/sub 80/Fe/sub 20/(20 nm)/Ta(5 nm). Low frequency magnetic noise was measured on MTJ at critical annealing temperature at which the MR ratio increases at 250 /spl deg/C and decreases at 350 /spl deg/C due to interlayer diffusion of Mn. The noise increases at the transition indicating that it was magnetic in origin and therefore is field dependent at the corresponding annealing temperatures.
ISSN:2150-4598
2150-4601
DOI:10.1109/INTMAG.2005.1464436