Systematic investigation of amorphous transition-metal-silicon-nitride electrodes for metal gate CMOS applications

Select amorphous metals (transition-metal-silicon-nitride: TaSiN, MoSiN, HfSiN, TiSiN), were systematically evaluated for their electrical (effective work function) and physical (XRD, HRTEM, HAADF-STEM, EELS) properties. Effective work function values spanning 4.16 to 4.8 eV were observed for these...

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Main Authors: Wen, H.C., Alshareef, H.N., Luan, H., Choi, K., Lysaght, P., Harris, H.R., Huffman, C., Brown, G.A., Bersuker, G., Zeitzoff, P., Huff, H., Majhi, P., Lee, B.H.
Format: Conference Proceeding
Language:English
Subjects:
Amorphous materials
Annealing
Composite materials
Dielectric materials
Dielectric substrates
Electrodes
High K dielectric materials
Inorganic materials
Semiconductor films
X-ray scattering
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Summary:Select amorphous metals (transition-metal-silicon-nitride: TaSiN, MoSiN, HfSiN, TiSiN), were systematically evaluated for their electrical (effective work function) and physical (XRD, HRTEM, HAADF-STEM, EELS) properties. Effective work function values spanning 4.16 to 4.8 eV were observed for these materials after a 1000/spl deg/C anneal and on both SiO/sub 2/ and Hf based high-k dielectrics, making them attractive candidates for future generation CMOS metal gates.
ISSN:0743-1562
DOI:10.1109/.2005.1469206