Highly reliable 50nm-thick PZT capacitor and low voltage FRAM device using Ir/SrRuO/sub 3//MOCVD PZT capacitor technology

For the first time, we successfully developed highly reliable 50nm-thick polycrystalline PZT capacitor using noble Ir/SrRuO/sub 3/ top electrode and MOCVD PZT technology. In the 50nm-thick PZT capacitor, 33/spl mu/C/cm/sup 2/ of remanent polarization and 0.7V of saturation voltage have been demonstr...

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Bibliographic Details
Main Authors: Yoo, D.C., Bae, B.J., Lim, J.E., Im, D.H., Park, S.O., Kim, S.H., Chung, U.I., Moon, J.T., Ryu, B.I.
Format: Conference Proceeding
Language:English
Subjects:
Capacitors
Degradation
Electrodes
Ferroelectric films
Ferroelectric materials
Low voltage
MOCVD
Nonvolatile memory
Polarization
Random access memory
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Summary:For the first time, we successfully developed highly reliable 50nm-thick polycrystalline PZT capacitor using noble Ir/SrRuO/sub 3/ top electrode and MOCVD PZT technology. In the 50nm-thick PZT capacitor, 33/spl mu/C/cm/sup 2/ of remanent polarization and 0.7V of saturation voltage have been demonstrated. Moreover, after 100hrs of bake-time at 150/spl deg/C, opposite-state polarization margin was over 23/spl mu/C/cm/sup 2/, which is world-wide best result so far achieved. Using this capacitor technology, highly reliable low voltage operating embedded FRAM device was successfully developed.
ISSN:0743-1562
DOI:10.1109/.2005.1469228