Influence of traps on diodes

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Bibliographic Details
Published in:IEEE transactions on electron devices 1964-11, Vol.11 (11), p.533-533
Main Authors: Lubart, N.D., Hegedus, C.L.
Format: Article
Language:English
Subjects:
Capacitance
Gallium arsenide
Gold
Junctions
P-i-n diodes
Tunneling
Voltage
Online Access:Get full text
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ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1964.15406