The presence of deep levels in ion implanted p-n junctions in GaAs and their effect on the electrical characteristics

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Bibliographic Details
Published in:IEEE transactions on electron devices 1968-09, Vol.15 (9), p.687-687
Main Authors: Hunsperger, R.G., Marsh, O.J., Mead, C.A.
Format: Article
Language:English
Subjects:
Crystals
Electric fields
Gallium arsenide
Ion implantation
Laboratories
Laser beams
Optical attenuators
Online Access:Get full text
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ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1968.16442