A modified linear sweep technique for MOS-C generation rate measurements

A modified linear sweep technique is described which allows one to rapidly determine the carrier generation rate versus semiconductor depletion width dependence exhibited by deeply depleted MOS-C structures. Although requiring more sophisticated instrumentation, the modified procedure is more flexib...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1975-11, Vol.22 (11), p.1051-1052
Main Authors: Pierret, R.F., Small, D.W.
Format: Article
Language:English
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Summary:A modified linear sweep technique is described which allows one to rapidly determine the carrier generation rate versus semiconductor depletion width dependence exhibited by deeply depleted MOS-C structures. Although requiring more sophisticated instrumentation, the modified procedure is more flexible, more accurate, and less time-consuming than the original technique.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1975.18270