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IIB-7 electron bombarded silicon performance of CCD imagers
Summary form only. An abstract of the above-titled article taken from the Device Research Conference (24-26 June 1975, Carleton University, Ottawa, Ont., Canada) is presented.
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Published in: | IEEE transactions on electron devices 1975-11, Vol.22 (11), p.1059-1059 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
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container_end_page | 1059 |
container_issue | 11 |
container_start_page | 1059 |
container_title | IEEE transactions on electron devices |
container_volume | 22 |
creator | Roberts, C.G. Robinson, D.A. Barton, J.B. Collins, D.R. |
description | Summary form only. An abstract of the above-titled article taken from the Device Research Conference (24-26 June 1975, Carleton University, Ottawa, Ont., Canada) is presented. |
doi_str_mv | 10.1109/T-ED.1975.18292 |
format | article |
fullrecord | <record><control><sourceid>proquest_ieee_</sourceid><recordid>TN_cdi_ieee_primary_1478127</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1478127</ieee_id><sourcerecordid>28153221</sourcerecordid><originalsourceid>FETCH-LOGICAL-c911-652a86adde55bdb1147381294fa00e3aab4b3505cc870bf4830b8d173f3d96ae3</originalsourceid><addsrcrecordid>eNpFkD1PwzAQhi0EEuVjZmDJxJbW54_YFhOkBSpVYslu2c4FBSV1sduBf09KkZhOd3re06uHkDugcwBqFk25Ws7BKDkHzQw7IzOQUpWmEtU5mVEKujRc80tylfPntFZCsBl5XK-fS1XggGGf4rbwcfQutdgWuR_6MF12mLqYRrcNWMSuqOtl0Y_uA1O-IRedGzLe_s1r0rysmvqt3Ly_ruunTRkMQFlJ5nTl2hal9K0HEIprYEZ0jlLkznnhuaQyBK2o74Tm1OsWFO94ayqH_Jo8nN7uUvw6YN7bsc8Bh8FtMR6yZRokZwwmcHECQ4o5J-zsLk1V07cFao-ObGNXS3t0ZH8dTYn7U6JHxH9aqKmg4j-vF2EI</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28153221</pqid></control><display><type>article</type><title>IIB-7 electron bombarded silicon performance of CCD imagers</title><source>IEEE Xplore (Online service)</source><creator>Roberts, C.G. ; Robinson, D.A. ; Barton, J.B. ; Collins, D.R.</creator><creatorcontrib>Roberts, C.G. ; Robinson, D.A. ; Barton, J.B. ; Collins, D.R.</creatorcontrib><description>Summary form only. An abstract of the above-titled article taken from the Device Research Conference (24-26 June 1975, Carleton University, Ottawa, Ont., Canada) is presented.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/T-ED.1975.18292</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>IEEE</publisher><ispartof>IEEE transactions on electron devices, 1975-11, Vol.22 (11), p.1059-1059</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c911-652a86adde55bdb1147381294fa00e3aab4b3505cc870bf4830b8d173f3d96ae3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1478127$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,777,781,27905,27906,54777</link.rule.ids></links><search><creatorcontrib>Roberts, C.G.</creatorcontrib><creatorcontrib>Robinson, D.A.</creatorcontrib><creatorcontrib>Barton, J.B.</creatorcontrib><creatorcontrib>Collins, D.R.</creatorcontrib><title>IIB-7 electron bombarded silicon performance of CCD imagers</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>Summary form only. An abstract of the above-titled article taken from the Device Research Conference (24-26 June 1975, Carleton University, Ottawa, Ont., Canada) is presented.</description><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1975</creationdate><recordtype>article</recordtype><recordid>eNpFkD1PwzAQhi0EEuVjZmDJxJbW54_YFhOkBSpVYslu2c4FBSV1sduBf09KkZhOd3re06uHkDugcwBqFk25Ws7BKDkHzQw7IzOQUpWmEtU5mVEKujRc80tylfPntFZCsBl5XK-fS1XggGGf4rbwcfQutdgWuR_6MF12mLqYRrcNWMSuqOtl0Y_uA1O-IRedGzLe_s1r0rysmvqt3Ly_ruunTRkMQFlJ5nTl2hal9K0HEIprYEZ0jlLkznnhuaQyBK2o74Tm1OsWFO94ayqH_Jo8nN7uUvw6YN7bsc8Bh8FtMR6yZRokZwwmcHECQ4o5J-zsLk1V07cFao-ObGNXS3t0ZH8dTYn7U6JHxH9aqKmg4j-vF2EI</recordid><startdate>197511</startdate><enddate>197511</enddate><creator>Roberts, C.G.</creator><creator>Robinson, D.A.</creator><creator>Barton, J.B.</creator><creator>Collins, D.R.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>197511</creationdate><title>IIB-7 electron bombarded silicon performance of CCD imagers</title><author>Roberts, C.G. ; Robinson, D.A. ; Barton, J.B. ; Collins, D.R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c911-652a86adde55bdb1147381294fa00e3aab4b3505cc870bf4830b8d173f3d96ae3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1975</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Roberts, C.G.</creatorcontrib><creatorcontrib>Robinson, D.A.</creatorcontrib><creatorcontrib>Barton, J.B.</creatorcontrib><creatorcontrib>Collins, D.R.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Roberts, C.G.</au><au>Robinson, D.A.</au><au>Barton, J.B.</au><au>Collins, D.R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>IIB-7 electron bombarded silicon performance of CCD imagers</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1975-11</date><risdate>1975</risdate><volume>22</volume><issue>11</issue><spage>1059</spage><epage>1059</epage><pages>1059-1059</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>Summary form only. An abstract of the above-titled article taken from the Device Research Conference (24-26 June 1975, Carleton University, Ottawa, Ont., Canada) is presented.</abstract><pub>IEEE</pub><doi>10.1109/T-ED.1975.18292</doi><tpages>1</tpages></addata></record> |
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identifier | ISSN: 0018-9383 |
ispartof | IEEE transactions on electron devices, 1975-11, Vol.22 (11), p.1059-1059 |
issn | 0018-9383 1557-9646 |
language | eng |
recordid | cdi_ieee_primary_1478127 |
source | IEEE Xplore (Online service) |
title | IIB-7 electron bombarded silicon performance of CCD imagers |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-19T14%3A36%3A45IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_ieee_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=IIB-7%20electron%20bombarded%20silicon%20performance%20of%20CCD%20imagers&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Roberts,%20C.G.&rft.date=1975-11&rft.volume=22&rft.issue=11&rft.spage=1059&rft.epage=1059&rft.pages=1059-1059&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/T-ED.1975.18292&rft_dat=%3Cproquest_ieee_%3E28153221%3C/proquest_ieee_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c911-652a86adde55bdb1147381294fa00e3aab4b3505cc870bf4830b8d173f3d96ae3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=28153221&rft_id=info:pmid/&rft_ieee_id=1478127&rfr_iscdi=true |