V-4 topographical investigation of variations of stoichiometry in Ga1-xAlxAs and carrier concentrations in GaAs using electroreflectance

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 1977-09, Vol.24 (9), p.1213-1213
Main Authors: Pollak, F.H., Okeke, C.E., Vanier, P.E., Raccah, P.M.
Format: Article
Language:English
Subjects:
Crystals
Diode lasers
Gallium arsenide
Heterojunctions
Laser theory
Photodiodes
Temperature sensors
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1977.18969