Temperature dependence of In-doped silicon strain gages

An alternative method for the doping of silicon so as to reduce the temperature coefficient of the silicon's resistivity (TCR) is reported. The method is based on the use of indium (a deep-level acceptor impurity) as a primary dopant and B, Al, or Ga (shallow-level acceptors). Alternatively, it...

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Bibliographic Details
Main Authors: Tamim, H.R., Estrada, H.V.
Format: Conference Proceeding
Language:English
Subjects:
Actuators
Capacitive sensors
Conductivity
Mechanical sensors
Mechanical variables measurement
Silicon
Strain measurement
Temperature dependence
Temperature sensors
Thermal stresses
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Summary:An alternative method for the doping of silicon so as to reduce the temperature coefficient of the silicon's resistivity (TCR) is reported. The method is based on the use of indium (a deep-level acceptor impurity) as a primary dopant and B, Al, or Ga (shallow-level acceptors). Alternatively, it is shown that a parallel array of two strain gauges can also lead to a significant TCR. Preliminary experimental results indicate that the TCR can be reduced by at least one order of magnitude, within a temperature range of 100 degrees C. Theoretical calculations indicate that this coefficient can be as low as 10 ppm/ degrees C.< >
DOI:10.1109/SECON.1991.147934