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KTC noise on direct injection from IR diodes
When a MOSFET is used to transfer the photogenerated charge from an IR diode to the input of a CCD in the "direct-injection" mode, Johnson-Nyquist noise on the MOSFET transconductance results in a variance in the charge integrated in the CCD which is approximately equal to KTC under the as...
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Published in: | IEEE transactions on electron devices 1980-05, Vol.27 (5), p.998-1000, Article 998 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Citations: | Items that cite this one |
Online Access: | Get full text |
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Summary: | When a MOSFET is used to transfer the photogenerated charge from an IR diode to the input of a CCD in the "direct-injection" mode, Johnson-Nyquist noise on the MOSFET transconductance results in a variance in the charge integrated in the CCD which is approximately equal to KTC under the assumption of large diode resistance, where C is the detector capacitance. |
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ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/T-ED.1980.19973 |