An In0.53Ga0.47As junction field-effect transistor

Preliminary results are reported for the operation of a junction field-effect transistor fabricated from In 0.53 Ga 0.47 As grown lattice-matched to an InP:Fe substrate.

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Bibliographic Details
Published in:IEEE electron device letters 1980-01, Vol.1 (6), p.110-111
Main Authors: Leheny, R.F., Nahory, R.E., Pollack, M.A., Ballman, A.A., Beebe, E.D., DeWinter, J.C., Martin, R.J.
Format: Article
Language:English
Subjects:
Crystalline materials
FETs
Gallium arsenide
Indium phosphide
Lattices
Optical devices
Optical materials
Optical scattering
P-n junctions
Substrates
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Description
Summary:Preliminary results are reported for the operation of a junction field-effect transistor fabricated from In 0.53 Ga 0.47 As grown lattice-matched to an InP:Fe substrate.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1980.25249