Achieving accuracy in transistor and thyristor modeling

• Published in: IEEE transactions on electron devices 1981-09, Vol.28 (9), p.1053-1059
• Main Authors: Adler, M.S., Possin, G.E.
• Format: Article
• Language: English
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/T-ED.1981.20484

There has been a great deal of progress both in the area of device modeling and in quantifying many of the physical Phenomena operating in silicon. However, there are questions concerning the consistency of the various models and there are uncertainties regarding the formulations af many of the important physical phenomena. In this paper the consistency between the present "exact" theory and three other models will be examined in the context of analyzing a diode, transistor, and thyristor. In addition, the available experimental and theoretical data on band gap narrowing (BGN) will be studied including recent data from an electron beam probing experiment (EBIC). The latter allows a model for BGN to be formulated based solely on experimental data ar concentrations up to 10 20 cm -3 . New data will also be presented which establish a basis for the dependency of Shockley-Read-Hall (SRH) lifetime on impurity concentrations as well as showing that Auger recombination may operate through defect centers rather than being band to band. The literature will be reviewed and formulations for carrier degeneracy, impurity deionization, carrier-carrier scattering, and the temperature dependence of the carrier mobilities will also be studied.