A new theory of g-r and 1/f noise

A new unified formulation for generation-recombination (g-r) and 1/ f noise theory is attempted by introducing the total carrier number fluctuation mechanism via the trapping-detrapping processes between every discrete energy level in the conduction band and single degenerate traplevel without assum...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1981-12, Vol.28 (12), p.1555-1557
Main Author: CHUNG HA SUH, M R
Format: Article
Language:English
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Summary:A new unified formulation for generation-recombination (g-r) and 1/ f noise theory is attempted by introducing the total carrier number fluctuation mechanism via the trapping-detrapping processes between every discrete energy level in the conduction band and single degenerate traplevel without assuming the 1/τ distribution.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1981.20646