Laser recrystallized polysilicon on SiO2for high performance resistors

We demonstrate, for the first time, a technique for the fabrication of polysilicon resistors with excellent control and temperature characteristics: a standard deviation of 2.5 Ω and temperature variation of -5.6% from 25° to 125°C for 1.96 K Ω, 4.5 × 10 14 cm -2 Boron implanted polysilicon resistor...

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Bibliographic Details
Published in:IEEE electron device letters 1981-10, Vol.2 (10), p.254-256
Main Authors: Shah, R.R., Hollingsworth, D.R., Crosthwait, D.L.
Format: Article
Language:English
Subjects:
Annealing
Electrical resistance measurement
Etching
Laser modes
Laser theory
Measurement standards
Oxidation
Resistors
Silicon
Temperature measurement
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Summary:We demonstrate, for the first time, a technique for the fabrication of polysilicon resistors with excellent control and temperature characteristics: a standard deviation of 2.5 Ω and temperature variation of -5.6% from 25° to 125°C for 1.96 K Ω, 4.5 × 10 14 cm -2 Boron implanted polysilicon resistors. The technique is based on fabricating resistors in laser recrystallized polysilicon on SiO 2 . Resistor performance is compared to that of similar resistors fabricated in standard LPCVD polysilicon and in single crystal silicon.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1981.25423