Detailed performance characteristics of hybrid InP-InGaAsP APD's

Detailed performance characteristics of hybrid InP-InGaAsP APD's having negligible dark current (I D < 6 nA at M = 30) are reported. The excess noise factor F is found to be given by F/M ≈ const ≈ 0.42 ± 0.10 for gains in the range 5 ≤ M ≤ 35. The breakdown voltage increases with temperature...

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Bibliographic Details
Published in:IEEE electron device letters 1981-10, Vol.2 (10), p.268-271
Main Authors: Yeats, R., Von Dessonneck, K.
Format: Article
Language:English
Subjects:
Breakdown voltage
Capacitance
Dark current
Indium phosphide
Leakage current
Optical fibers
Packaging
Substrates
Temperature
Thermal conductivity
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Summary:Detailed performance characteristics of hybrid InP-InGaAsP APD's having negligible dark current (I D < 6 nA at M = 30) are reported. The excess noise factor F is found to be given by F/M ≈ const ≈ 0.42 ± 0.10 for gains in the range 5 ≤ M ≤ 35. The breakdown voltage increases with temperature according to Δ V_{BD}/V_{BD} /ΔT = 1.0 × 10 -3 /°C. The dark current near breakdown doubles every 15°C. Sub-nanosecond rise times are observed, however, fall times are extended to ∼3 nsec by a diffusion tail that will be difficult to completely eliminate.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1981.25428