The effect of parasitic capacitances on the circuit speed of GaAs MESFET ring oscillators

Circuit parasitic capacitances for GaAs ring oscillators (RO's) were calculated and used for SPICE2 circuit simulation. The simulated delays agreed with the measured data to within ∼10 percent. The results indicate that the effect of the circuit parasitic capacitances are dominant in determinin...

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Published in:IEEE transactions on electron devices 1982-11, Vol.29 (11), p.1805-1809
Main Authors: Chang, C.T.M., Namordi, M.R., White, W.A.
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Language:English
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creator Chang, C.T.M.
Namordi, M.R.
White, W.A.
description Circuit parasitic capacitances for GaAs ring oscillators (RO's) were calculated and used for SPICE2 circuit simulation. The simulated delays agreed with the measured data to within ∼10 percent. The results indicate that the effect of the circuit parasitic capacitances are dominant in determining circuit speed for high-density IC's at the microwave frequency.
doi_str_mv 10.1109/T-ED.1982.21030
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title The effect of parasitic capacitances on the circuit speed of GaAs MESFET ring oscillators
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