In-situ low energy BF2+ion doping for silicon molecular beam epitaxy

An experimental study of the p-type ion dopant BF 2 + in silicon molecular beam epitaxy (MBE) is described. BF 2 + was used to dope MBE layers during growth to levels ranging from 1 × 10 16 /cm 3 to 4 × 10 18 /cm 3 over a growth temperature range of 650°C to 1000°C. The layers were evaluated using s...

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Bibliographic Details
Published in:IEEE electron device letters 1982-05, Vol.3 (5), p.138-140
Main Authors: Swartz, R.G., McFee, J.H., Voshchenkov, A.M., Finegan, S.N., Archer, V.D., O'Day, P.J.
Format: Article
Language:English
Subjects:
Chemicals
Diodes
Electric breakdown
Epitaxial layers
Etching
Mass spectroscopy
Molecular beam epitaxial growth
P-n junctions
Silicon
Temperature distribution
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Summary:An experimental study of the p-type ion dopant BF 2 + in silicon molecular beam epitaxy (MBE) is described. BF 2 + was used to dope MBE layers during growth to levels ranging from 1 × 10 16 /cm 3 to 4 × 10 18 /cm 3 over a growth temperature range of 650°C to 1000°C. The layers were evaluated using spreading resistance, chemical etching, and secondary ion mass spectroscopy. Complete dopant activation was observed for all growth temperatures. Remnant fluorine in the epitaxial layer was less than 2 × 10 16 /cm 3 in all cases. Diffused p-n junction diodes fabricated in BF 2 +-doped epitaxial material showed hard reverse breakdown characteristics.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1982.25513