Digital NMOS test circuits fabricated in silicon MBE

Integrated digital test circuits, as well as discrete NMOS devices, have been fabricated in epitaxial layers produced by silicon molecular-beam epitaxy (Si-MBE). The performance of these circuits and devices was found to be very similar to that of identical components processed in standard substrate...

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Bibliographic Details
Published in:IEEE electron device letters 1984-02, Vol.5 (2), p.29-31
Main Authors: Swartz, R.G., Chin, G.M., Voshchenkov, A.M., Ko, P., Wooley, B.A., Finegan, S.N., Bosworth, R.H.
Format: Article
Language:English
Subjects:
Applied sciences
Chemicals
Circuit testing
Conductivity
Electronics
Epitaxial layers
Exact sciences and technology
Heat transfer
Integrated circuits
Ion beams
Molecular beam epitaxial growth
MOS devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Substrates
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Summary:Integrated digital test circuits, as well as discrete NMOS devices, have been fabricated in epitaxial layers produced by silicon molecular-beam epitaxy (Si-MBE). The performance of these circuits and devices was found to be very similar to that of identical components processed in standard substrates. Unusually high low-field mobility was measured in the MBE MOSFET's.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1984.25821