Recrystallization of Si films on thermal SiO2-coated Si substrates using a high-speed e-beam line source

Lateral zone melting from a fast-scanning (5-30-cm/s) e-beam line source has been used to grow single-crystal films with an area limited only by the e-beam scan field. Electron backscattering contrast and etch pit techniques have been used to study the crystallographic orientation and the extent of...

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Bibliographic Details
Published in:IEEE electron device letters 1984-01, Vol.5 (2), p.38-40
Main Authors: Rensch, D.B., Chen, J.Y.
Format: Article
Language:English
Subjects:
Applied sciences
Area measurement
Backscatter
Electron beams
Electronics
Etching
Exact sciences and technology
FETs
Frequency measurement
Heating
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor films
Silicon
Substrates
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Summary:Lateral zone melting from a fast-scanning (5-30-cm/s) e-beam line source has been used to grow single-crystal films with an area limited only by the e-beam scan field. Electron backscattering contrast and etch pit techniques have been used to study the crystallographic orientation and the extent of single-crystal silicon film growth on thermal SiO 2 -coated silicon (SOI) wafers.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1984.25824