IIIA-3 comparison of compositionally abrupt and graded emitter-base junctions in the heterojunction bipolar transistor

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Bibliographic Details
Published in:IEEE transactions on electron devices 1986-11, Vol.33 (11), p.1844-1844
Main Authors: Enquist, P.M., Ramberg, L.P., Eastman, L.F.
Format: Article
Language:English
Online Access:Get full text
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ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1986.22774