IIIB-8 titanium disilicide contact resistivity and its impact on 1-µm CMOS circuit performance

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Bibliographic Details
Published in:IEEE transactions on electron devices 1986-11, Vol.33 (11), p.1849-1850
Main Authors: Scott, D.B., Chapman, R.A., Wei, C.C., Mahant-Shetti, S., Haken, R.A., Holloway, T.C.
Format: Article
Language:English
Subjects:
Annealing
Junctions
Semiconductor device measurement
Silicides
Silicon
Temperature measurement
Titanium
Online Access:Get full text
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ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1986.22787