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IIA-3 enhancement of 2DEG density in GaAs/InGaAs/AlGaAs double heterojunction power MODFET structures by buried superlattice and buried p+-GaAs buffer layers

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Bibliographic Details
Published in:IEEE transactions on electron devices 1987-11, Vol.34 (11), p.2356-2357
Main Authors: Chen, Y.K., Radulescu, D.C., Lepore, A.N., Foisy, M.C., Wang, G.W., Tasker, P.J., Eastman, L.F.
Format: Article
Language:English
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ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1987.23245