IIA-3 enhancement of 2DEG density in GaAs/InGaAs/AlGaAs double heterojunction power MODFET structures by buried superlattice and buried p+-GaAs buffer layers

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Published in:IEEE transactions on electron devices 1987-11, Vol.34 (11), p.2356-2357
Main Authors: Chen, Y.K., Radulescu, D.C., Lepore, A.N., Foisy, M.C., Wang, G.W., Tasker, P.J., Eastman, L.F.
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Language:English
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container_end_page 2357
container_issue 11
container_start_page 2356
container_title IEEE transactions on electron devices
container_volume 34
creator Chen, Y.K.
Radulescu, D.C.
Lepore, A.N.
Foisy, M.C.
Wang, G.W.
Tasker, P.J.
Eastman, L.F.
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doi_str_mv 10.1109/T-ED.1987.23245
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fullrecord <record><control><sourceid>crossref_ieee_</sourceid><recordid>TN_cdi_ieee_primary_1486956</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1486956</ieee_id><sourcerecordid>10_1109_T_ED_1987_23245</sourcerecordid><originalsourceid>FETCH-LOGICAL-c176t-cdba13856c96e0b5549304b6c36f1994fc08c4c5efc5a656602a059d78e908723</originalsourceid><addsrcrecordid>eNpFkDtPwzAUhS0EEqUwM7B4R2nt-JF4jJpSIhV1KXPkODdqqtSJbEeoP4b_Sh8gpqN7dc43fAg9UzKjlKj5NlrmM6rSZBazmIsbNKFCJJGSXN6iCSE0jRRL2T168H5_OiXn8QR9F0UWMQx2p62BA9iA-wbH-XKFa7C-DUfcWrzSmZ8X9hJZdw5c92PVAd5BANfvR2tC21s89F_g8Mcmf1tusQ9uNGF04HF1xNXoWqixHwdwnQ6hNYC1rf_-w2t04VZj05wQnT6C84_ortGdh6ffnKLPE3jxHq03q2KRrSNDExkiU1easlRIoySQSgiuGOGVNEw2VCneGJIabgQ0RmgppCSxJkLVSQqKpEnMpmh-5RrXe--gKQfXHrQ7lpSUZ7vltlzm5dluebF7WrxcFy0A_Ld5KpWQ7Acgf3aF</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>IIA-3 enhancement of 2DEG density in GaAs/InGaAs/AlGaAs double heterojunction power MODFET structures by buried superlattice and buried p+-GaAs buffer layers</title><source>IEEE Electronic Library (IEL) Journals</source><creator>Chen, Y.K. ; Radulescu, D.C. ; Lepore, A.N. ; Foisy, M.C. ; Wang, G.W. ; Tasker, P.J. ; Eastman, L.F.</creator><creatorcontrib>Chen, Y.K. ; Radulescu, D.C. ; Lepore, A.N. ; Foisy, M.C. ; Wang, G.W. ; Tasker, P.J. ; Eastman, L.F.</creatorcontrib><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/T-ED.1987.23245</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>IEEE</publisher><ispartof>IEEE transactions on electron devices, 1987-11, Vol.34 (11), p.2356-2357</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c176t-cdba13856c96e0b5549304b6c36f1994fc08c4c5efc5a656602a059d78e908723</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1486956$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,54771</link.rule.ids></links><search><creatorcontrib>Chen, Y.K.</creatorcontrib><creatorcontrib>Radulescu, D.C.</creatorcontrib><creatorcontrib>Lepore, A.N.</creatorcontrib><creatorcontrib>Foisy, M.C.</creatorcontrib><creatorcontrib>Wang, G.W.</creatorcontrib><creatorcontrib>Tasker, P.J.</creatorcontrib><creatorcontrib>Eastman, L.F.</creatorcontrib><title>IIA-3 enhancement of 2DEG density in GaAs/InGaAs/AlGaAs double heterojunction power MODFET structures by buried superlattice and buried p+-GaAs buffer layers</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1987</creationdate><recordtype>article</recordtype><recordid>eNpFkDtPwzAUhS0EEqUwM7B4R2nt-JF4jJpSIhV1KXPkODdqqtSJbEeoP4b_Sh8gpqN7dc43fAg9UzKjlKj5NlrmM6rSZBazmIsbNKFCJJGSXN6iCSE0jRRL2T168H5_OiXn8QR9F0UWMQx2p62BA9iA-wbH-XKFa7C-DUfcWrzSmZ8X9hJZdw5c92PVAd5BANfvR2tC21s89F_g8Mcmf1tusQ9uNGF04HF1xNXoWqixHwdwnQ6hNYC1rf_-w2t04VZj05wQnT6C84_ortGdh6ffnKLPE3jxHq03q2KRrSNDExkiU1easlRIoySQSgiuGOGVNEw2VCneGJIabgQ0RmgppCSxJkLVSQqKpEnMpmh-5RrXe--gKQfXHrQ7lpSUZ7vltlzm5dluebF7WrxcFy0A_Ld5KpWQ7Acgf3aF</recordid><startdate>198711</startdate><enddate>198711</enddate><creator>Chen, Y.K.</creator><creator>Radulescu, D.C.</creator><creator>Lepore, A.N.</creator><creator>Foisy, M.C.</creator><creator>Wang, G.W.</creator><creator>Tasker, P.J.</creator><creator>Eastman, L.F.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>198711</creationdate><title>IIA-3 enhancement of 2DEG density in GaAs/InGaAs/AlGaAs double heterojunction power MODFET structures by buried superlattice and buried p+-GaAs buffer layers</title><author>Chen, Y.K. ; Radulescu, D.C. ; Lepore, A.N. ; Foisy, M.C. ; Wang, G.W. ; Tasker, P.J. ; Eastman, L.F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c176t-cdba13856c96e0b5549304b6c36f1994fc08c4c5efc5a656602a059d78e908723</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1987</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen, Y.K.</creatorcontrib><creatorcontrib>Radulescu, D.C.</creatorcontrib><creatorcontrib>Lepore, A.N.</creatorcontrib><creatorcontrib>Foisy, M.C.</creatorcontrib><creatorcontrib>Wang, G.W.</creatorcontrib><creatorcontrib>Tasker, P.J.</creatorcontrib><creatorcontrib>Eastman, L.F.</creatorcontrib><collection>CrossRef</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chen, Y.K.</au><au>Radulescu, D.C.</au><au>Lepore, A.N.</au><au>Foisy, M.C.</au><au>Wang, G.W.</au><au>Tasker, P.J.</au><au>Eastman, L.F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>IIA-3 enhancement of 2DEG density in GaAs/InGaAs/AlGaAs double heterojunction power MODFET structures by buried superlattice and buried p+-GaAs buffer layers</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1987-11</date><risdate>1987</risdate><volume>34</volume><issue>11</issue><spage>2356</spage><epage>2357</epage><pages>2356-2357</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><pub>IEEE</pub><doi>10.1109/T-ED.1987.23245</doi><tpages>2</tpages></addata></record>
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title IIA-3 enhancement of 2DEG density in GaAs/InGaAs/AlGaAs double heterojunction power MODFET structures by buried superlattice and buried p+-GaAs buffer layers
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-31T23%3A29%3A48IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref_ieee_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=IIA-3%20enhancement%20of%202DEG%20density%20in%20GaAs/InGaAs/AlGaAs%20double%20heterojunction%20power%20MODFET%20structures%20by%20buried%20superlattice%20and%20buried%20p+-GaAs%20buffer%20layers&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Chen,%20Y.K.&rft.date=1987-11&rft.volume=34&rft.issue=11&rft.spage=2356&rft.epage=2357&rft.pages=2356-2357&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/T-ED.1987.23245&rft_dat=%3Ccrossref_ieee_%3E10_1109_T_ED_1987_23245%3C/crossref_ieee_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c176t-cdba13856c96e0b5549304b6c36f1994fc08c4c5efc5a656602a059d78e908723%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1486956&rfr_iscdi=true