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Interaction between monolithically integrated JI-LIGBTs under clamped inductive switching
Due to the increasing demand for multi-functionality in power integrated circuits, consideration must be given as to how multiple, adjacent, monolithically integrated, high voltage lateral power devices interact with each other when operated independently of one another. For the first time, we demon...
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creator | Green, D.W. Hardikar, S. Sweet, M. Vershinin, K.V. Sankara Narayanan, E.M. |
description | Due to the increasing demand for multi-functionality in power integrated circuits, consideration must be given as to how multiple, adjacent, monolithically integrated, high voltage lateral power devices interact with each other when operated independently of one another. For the first time, we demonstrate through extensive experiments and simulations that the breakdown, on-state, switching and safe operating area performance of LIGBT are all significantly affected by the operating conditions of an adjacent LIGBT in junction isolation technology. |
doi_str_mv | 10.1109/ISPSD.2005.1487965 |
format | conference_proceeding |
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identifier | ISSN: 1063-6854 |
ispartof | Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005, 2005, p.119-122 |
issn | 1063-6854 1946-0201 |
language | eng |
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source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Anodes Circuit simulation Current measurement Electric breakdown Integrated circuit technology Isolation technology Medical simulation Power integrated circuits Switching circuits Voltage |
title | Interaction between monolithically integrated JI-LIGBTs under clamped inductive switching |
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