SPICE modeling of MOSFETs in deep submicron

As the mainstream MOS technology is scaling into nanometer sizes, the development of physical and predictive models for circuit simulation that cover geometry, bias, temperature, DC, AC, RF, and noise characteristics becomes a major goal. The paper addresses the scaling, trends and their limiting fa...

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Main Authors: Angelov, G., Hristov, M.
Format: Conference Proceeding
Language:English
Subjects:
Circuit noise
Circuit simulation
Geometry
Mathematical model
MOSFETs
Physics
Predictive models
Radio frequency
SPICE
Temperature
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Hristov, M.
description As the mainstream MOS technology is scaling into nanometer sizes, the development of physical and predictive models for circuit simulation that cover geometry, bias, temperature, DC, AC, RF, and noise characteristics becomes a major goal. The paper addresses the scaling, trends and their limiting factors and follows through the evolution of the three MOSFET model generations of SPICE: from the Berkeley Levels 1, 2, 3 to the latest BSIM3v3, BSIM4, MM11, EKV, and SP2001. MOSFET models are examined, emphasizing device physics and mathematical techniques for numerical calculation.
doi_str_mv 10.1109/ISSE.2004.1490430
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ispartof 27th International Spring Seminar on Electronics Technology: Meeting the Challenges of Electronics Technology Progress, 2004, 2004, Vol.2, p.257-262 vol.2
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Circuit noise
Circuit simulation
Geometry
Mathematical model
MOSFETs
Physics
Predictive models
Radio frequency
SPICE
Temperature
title SPICE modeling of MOSFETs in deep submicron
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