Three-phase 200 kVA UPS with IGBT consisting of high power factor converter and instantaneous waveform controlled HF PWM inverter

A description is given of a three-phase 200 kVA UPS (uninterruptible power supply). In this UPS, both the input converter section and the output inverter section utilize an IGBT (insulated gate bipolar transistor) as a main semiconductor switching device. Compared with the conventional type of UPS u...

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Main Authors: Yatsu, M., Kuroki, K., Katoh, M., Fujikura, M.
Format: Conference Proceeding
Language:English
Subjects:
Insulated gate bipolar transistors
Inverters
Noise reduction
Power semiconductor switches
Reactive power
Semiconductor device noise
Switching converters
Switching frequency
Uninterruptible power systems
Voltage
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creator Yatsu, M.
Kuroki, K.
Katoh, M.
Fujikura, M.
description A description is given of a three-phase 200 kVA UPS (uninterruptible power supply). In this UPS, both the input converter section and the output inverter section utilize an IGBT (insulated gate bipolar transistor) as a main semiconductor switching device. Compared with the conventional type of UPS using bipolar junction transistors, this UPS provides an equivalent efficiency in spite of having an approximately 10 times higher switching frequency. As a result, the new UPS is of a compact, lightweight, low-acoustic noise, and high performance design, resulting in reduced input harmonic current (less than 5% THD) and also a reduced output voltage distortion (less than 8% THD) under a nonlinear load.< >
doi_str_mv 10.1109/IECON.1990.149283
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fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_149283</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>149283</ieee_id><sourcerecordid>149283</sourcerecordid><originalsourceid>FETCH-LOGICAL-i87t-dcf48e74eb75ddc5691a286cc331d250876bba2ab5a907f17a58c4e87a8982a23</originalsourceid><addsrcrecordid>eNotUNtKAzEQDYig1n6APuUHtibZ7CZ5rKU3qLbgqo8lm53tRttNSdIWH_1zt9RhYDiXOTCD0AMlA0qJepqPR8vXAVWqw1wxmV6hOyKF4iwnhN-gfghfpCueUZbnt-i3aDxAsm90AMwIwd8fQ_y-esMnGxs8nz4X2Lg22BBtu8Guxo3dNHjvTuBxrU10_qwfwceO0G2FbRuibrsGdwj4pI9QO787m6J32y1UeDbBq8-XznjZukfXtd4G6P_PHiom42I0SxbL6Xw0XCRWiphUpuYSBIdSZFVlslxRzWRuTJrSimXdiXlZaqbLTCsiaip0Jg0HKbRUkmmW9tDjJdYCwHrv7U77n_XlR-kfldheKQ</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Three-phase 200 kVA UPS with IGBT consisting of high power factor converter and instantaneous waveform controlled HF PWM inverter</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Yatsu, M. ; Kuroki, K. ; Katoh, M. ; Fujikura, M.</creator><creatorcontrib>Yatsu, M. ; Kuroki, K. ; Katoh, M. ; Fujikura, M.</creatorcontrib><description>A description is given of a three-phase 200 kVA UPS (uninterruptible power supply). In this UPS, both the input converter section and the output inverter section utilize an IGBT (insulated gate bipolar transistor) as a main semiconductor switching device. Compared with the conventional type of UPS using bipolar junction transistors, this UPS provides an equivalent efficiency in spite of having an approximately 10 times higher switching frequency. As a result, the new UPS is of a compact, lightweight, low-acoustic noise, and high performance design, resulting in reduced input harmonic current (less than 5% THD) and also a reduced output voltage distortion (less than 8% THD) under a nonlinear load.&lt; &gt;</description><identifier>ISBN: 0879426004</identifier><identifier>ISBN: 9780879426002</identifier><identifier>DOI: 10.1109/IECON.1990.149283</identifier><language>eng</language><publisher>IEEE</publisher><subject>Insulated gate bipolar transistors ; Inverters ; Noise reduction ; Power semiconductor switches ; Reactive power ; Semiconductor device noise ; Switching converters ; Switching frequency ; Uninterruptible power systems ; Voltage</subject><ispartof>[Proceedings] IECON '90: 16th Annual Conference of IEEE Industrial Electronics Society, 1990, p.1057-1062 vol.2</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/149283$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/149283$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Yatsu, M.</creatorcontrib><creatorcontrib>Kuroki, K.</creatorcontrib><creatorcontrib>Katoh, M.</creatorcontrib><creatorcontrib>Fujikura, M.</creatorcontrib><title>Three-phase 200 kVA UPS with IGBT consisting of high power factor converter and instantaneous waveform controlled HF PWM inverter</title><title>[Proceedings] IECON '90: 16th Annual Conference of IEEE Industrial Electronics Society</title><addtitle>IECON</addtitle><description>A description is given of a three-phase 200 kVA UPS (uninterruptible power supply). In this UPS, both the input converter section and the output inverter section utilize an IGBT (insulated gate bipolar transistor) as a main semiconductor switching device. Compared with the conventional type of UPS using bipolar junction transistors, this UPS provides an equivalent efficiency in spite of having an approximately 10 times higher switching frequency. As a result, the new UPS is of a compact, lightweight, low-acoustic noise, and high performance design, resulting in reduced input harmonic current (less than 5% THD) and also a reduced output voltage distortion (less than 8% THD) under a nonlinear load.&lt; &gt;</description><subject>Insulated gate bipolar transistors</subject><subject>Inverters</subject><subject>Noise reduction</subject><subject>Power semiconductor switches</subject><subject>Reactive power</subject><subject>Semiconductor device noise</subject><subject>Switching converters</subject><subject>Switching frequency</subject><subject>Uninterruptible power systems</subject><subject>Voltage</subject><isbn>0879426004</isbn><isbn>9780879426002</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1990</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotUNtKAzEQDYig1n6APuUHtibZ7CZ5rKU3qLbgqo8lm53tRttNSdIWH_1zt9RhYDiXOTCD0AMlA0qJepqPR8vXAVWqw1wxmV6hOyKF4iwnhN-gfghfpCueUZbnt-i3aDxAsm90AMwIwd8fQ_y-esMnGxs8nz4X2Lg22BBtu8Guxo3dNHjvTuBxrU10_qwfwceO0G2FbRuibrsGdwj4pI9QO787m6J32y1UeDbBq8-XznjZukfXtd4G6P_PHiom42I0SxbL6Xw0XCRWiphUpuYSBIdSZFVlslxRzWRuTJrSimXdiXlZaqbLTCsiaip0Jg0HKbRUkmmW9tDjJdYCwHrv7U77n_XlR-kfldheKQ</recordid><startdate>1990</startdate><enddate>1990</enddate><creator>Yatsu, M.</creator><creator>Kuroki, K.</creator><creator>Katoh, M.</creator><creator>Fujikura, M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1990</creationdate><title>Three-phase 200 kVA UPS with IGBT consisting of high power factor converter and instantaneous waveform controlled HF PWM inverter</title><author>Yatsu, M. ; Kuroki, K. ; Katoh, M. ; Fujikura, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i87t-dcf48e74eb75ddc5691a286cc331d250876bba2ab5a907f17a58c4e87a8982a23</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1990</creationdate><topic>Insulated gate bipolar transistors</topic><topic>Inverters</topic><topic>Noise reduction</topic><topic>Power semiconductor switches</topic><topic>Reactive power</topic><topic>Semiconductor device noise</topic><topic>Switching converters</topic><topic>Switching frequency</topic><topic>Uninterruptible power systems</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Yatsu, M.</creatorcontrib><creatorcontrib>Kuroki, K.</creatorcontrib><creatorcontrib>Katoh, M.</creatorcontrib><creatorcontrib>Fujikura, M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yatsu, M.</au><au>Kuroki, K.</au><au>Katoh, M.</au><au>Fujikura, M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Three-phase 200 kVA UPS with IGBT consisting of high power factor converter and instantaneous waveform controlled HF PWM inverter</atitle><btitle>[Proceedings] IECON '90: 16th Annual Conference of IEEE Industrial Electronics Society</btitle><stitle>IECON</stitle><date>1990</date><risdate>1990</risdate><spage>1057</spage><epage>1062 vol.2</epage><pages>1057-1062 vol.2</pages><isbn>0879426004</isbn><isbn>9780879426002</isbn><abstract>A description is given of a three-phase 200 kVA UPS (uninterruptible power supply). In this UPS, both the input converter section and the output inverter section utilize an IGBT (insulated gate bipolar transistor) as a main semiconductor switching device. Compared with the conventional type of UPS using bipolar junction transistors, this UPS provides an equivalent efficiency in spite of having an approximately 10 times higher switching frequency. As a result, the new UPS is of a compact, lightweight, low-acoustic noise, and high performance design, resulting in reduced input harmonic current (less than 5% THD) and also a reduced output voltage distortion (less than 8% THD) under a nonlinear load.&lt; &gt;</abstract><pub>IEEE</pub><doi>10.1109/IECON.1990.149283</doi></addata></record>
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ispartof [Proceedings] IECON '90: 16th Annual Conference of IEEE Industrial Electronics Society, 1990, p.1057-1062 vol.2
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Insulated gate bipolar transistors
Inverters
Noise reduction
Power semiconductor switches
Reactive power
Semiconductor device noise
Switching converters
Switching frequency
Uninterruptible power systems
Voltage
title Three-phase 200 kVA UPS with IGBT consisting of high power factor converter and instantaneous waveform controlled HF PWM inverter
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-03T00%3A17%3A02IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Three-phase%20200%20kVA%20UPS%20with%20IGBT%20consisting%20of%20high%20power%20factor%20converter%20and%20instantaneous%20waveform%20controlled%20HF%20PWM%20inverter&rft.btitle=%5BProceedings%5D%20IECON%20'90:%2016th%20Annual%20Conference%20of%20IEEE%20Industrial%20Electronics%20Society&rft.au=Yatsu,%20M.&rft.date=1990&rft.spage=1057&rft.epage=1062%20vol.2&rft.pages=1057-1062%20vol.2&rft.isbn=0879426004&rft.isbn_list=9780879426002&rft_id=info:doi/10.1109/IECON.1990.149283&rft_dat=%3Cieee_6IE%3E149283%3C/ieee_6IE%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i87t-dcf48e74eb75ddc5691a286cc331d250876bba2ab5a907f17a58c4e87a8982a23%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=149283&rfr_iscdi=true