Nano-wires for room temperature operated hybrid CMOS-NANO integrated circuits

N-doped polysilicon gated-nanowires (poly-SiNW) are reported. The V-shape and hysteresis of their I-V characteristics are used to build analog and memory circuit cells. Integration of the poly-SiNW in CMOS is demonstrated. A precise current-measurement application with 1pA resolution and negative di...

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Bibliographic Details
Main Authors: Ecoffey, S., Pott, V., Bouvet, D., Mazza, M., Mahapatra, S., Schmid, A., Leblebici, Y., Declercq, M.J., Ionescu, A.M.
Format: Conference Proceeding
Language:English
Subjects:
CMOS integrated circuits
CMOS memory circuits
CMOS technology
Current measurement
Energy consumption
Hybrid integrated circuits
Hysteresis
Input variables
Temperature
Voltage
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Summary:N-doped polysilicon gated-nanowires (poly-SiNW) are reported. The V-shape and hysteresis of their I-V characteristics are used to build analog and memory circuit cells. Integration of the poly-SiNW in CMOS is demonstrated. A precise current-measurement application with 1pA resolution and negative differential resistor is reported. A nanoscale capacitor-less hysteresis memory cell using constant-current biased poly-SiNW is designed and experimentally validated.
ISSN:0193-6530
2376-8606
DOI:10.1109/ISSCC.2005.1493968