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A new ammonia sensor based on a porous SiC membrane
Porous SiC has been found to be extremely sensitive to the presence of ammonia (NH/sub 3/) gas. We report the fabrication and preliminary characterisation of NH/sub 3/ sensors based on porous SiC and Al electrodes. The idea of the SiC is that it is a very durable material and that it should be good...
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| container_end_page | 1835 Vol. 2 |
| container_issue | |
| container_start_page | 1832 |
| container_title | |
| container_volume | 2 |
| creator | Connolly, E.J. Timmer, B. Pham, H.T.M. Groeneweg, J. Sarro, P.M. Olthuis, W. French, P.J. |
| description | Porous SiC has been found to be extremely sensitive to the presence of ammonia (NH/sub 3/) gas. We report the fabrication and preliminary characterisation of NH/sub 3/ sensors based on porous SiC and Al electrodes. The idea of the SiC is that it is a very durable material and that it should be good for sensors in harsh environments. Until now the only NH/sub 3/ sensors using SiC have been FET based, and the SiC was not porous. The SiC was deposited by PECVD on standard p-type single-crystal Si and was made porous by electrochemical etching in 73% HF and anodisation current-densities of 1-50 mA/cm/sup 2/. Because the etch-rate of Al in 73% HF is very low, we can use Al electrodes instead of Au. This also facilitates our sensor fabrication, as Al is more cleanroom friendly than Au. Preliminary data is given for our devices response to NH/sub 3/ in the range 0-10 ppm NH/sub 3/ in dry N/sub 2/ carrier gas. |
| doi_str_mv | 10.1109/SENSOR.2005.1497451 |
| format | conference_proceeding |
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Preliminary data is given for our devices response to NH/sub 3/ in the range 0-10 ppm NH/sub 3/ in dry N/sub 2/ carrier gas.</description><subject>Biomembranes</subject><subject>Dry etching</subject><subject>Electrodes</subject><subject>Fabrication</subject><subject>FETs</subject><subject>Gas detectors</subject><subject>Gold</subject><subject>Hafnium</subject><subject>Sensor phenomena and characterization</subject><subject>Silicon carbide</subject><issn>2159-547X</issn><isbn>0780389948</isbn><isbn>9780780389946</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2005</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotj8tKAzEYRgMqWGufoJu8wIz_n3uWZagXKBYcBXclt0LEmSmJIr69A_ZsPs7mg0PIGqFFBHvXb5_7_UvLAGSLwmoh8YLcgDbAjbXCXJIFQ2kbKfT7NVnV-gEz3CppzYLwDR3TD3XDMI3Z0ZrGOhXqXU2RTiN19DSV6bvSPnd0SIMvbky35OroPmtanXdJ3u63r91js9s_PHWbXZMZg6-GoxIRuFIaYwzMas_UEdisLEgdpFNGeWktT0IjSEATZFAzMWBw4PmSrP9_c0rpcCp5cOX3cG7kf3xwQ3Y</recordid><startdate>2005</startdate><enddate>2005</enddate><creator>Connolly, E.J.</creator><creator>Timmer, B.</creator><creator>Pham, H.T.M.</creator><creator>Groeneweg, J.</creator><creator>Sarro, P.M.</creator><creator>Olthuis, W.</creator><creator>French, P.J.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2005</creationdate><title>A new ammonia sensor based on a porous SiC membrane</title><author>Connolly, E.J. ; Timmer, B. ; Pham, H.T.M. ; Groeneweg, J. ; Sarro, P.M. ; Olthuis, W. ; French, P.J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i220t-3164d036671ddc297b26f026712c57c5a686b5993e47105018c5c6666dc1ca0b3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Biomembranes</topic><topic>Dry etching</topic><topic>Electrodes</topic><topic>Fabrication</topic><topic>FETs</topic><topic>Gas detectors</topic><topic>Gold</topic><topic>Hafnium</topic><topic>Sensor phenomena and characterization</topic><topic>Silicon carbide</topic><toplevel>online_resources</toplevel><creatorcontrib>Connolly, E.J.</creatorcontrib><creatorcontrib>Timmer, B.</creatorcontrib><creatorcontrib>Pham, H.T.M.</creatorcontrib><creatorcontrib>Groeneweg, J.</creatorcontrib><creatorcontrib>Sarro, P.M.</creatorcontrib><creatorcontrib>Olthuis, W.</creatorcontrib><creatorcontrib>French, P.J.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Connolly, E.J.</au><au>Timmer, B.</au><au>Pham, H.T.M.</au><au>Groeneweg, J.</au><au>Sarro, P.M.</au><au>Olthuis, W.</au><au>French, P.J.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A new ammonia sensor based on a porous SiC membrane</atitle><btitle>The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05</btitle><stitle>SENSOR</stitle><date>2005</date><risdate>2005</risdate><volume>2</volume><spage>1832</spage><epage>1835 Vol. 2</epage><pages>1832-1835 Vol. 2</pages><issn>2159-547X</issn><isbn>0780389948</isbn><isbn>9780780389946</isbn><abstract>Porous SiC has been found to be extremely sensitive to the presence of ammonia (NH/sub 3/) gas. We report the fabrication and preliminary characterisation of NH/sub 3/ sensors based on porous SiC and Al electrodes. The idea of the SiC is that it is a very durable material and that it should be good for sensors in harsh environments. Until now the only NH/sub 3/ sensors using SiC have been FET based, and the SiC was not porous. The SiC was deposited by PECVD on standard p-type single-crystal Si and was made porous by electrochemical etching in 73% HF and anodisation current-densities of 1-50 mA/cm/sup 2/. Because the etch-rate of Al in 73% HF is very low, we can use Al electrodes instead of Au. 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| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 2159-547X |
| ispartof | The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05, 2005, Vol.2, p.1832-1835 Vol. 2 |
| issn | 2159-547X |
| language | eng |
| recordid | cdi_ieee_primary_1497451 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Biomembranes Dry etching Electrodes Fabrication FETs Gas detectors Gold Hafnium Sensor phenomena and characterization Silicon carbide |
| title | A new ammonia sensor based on a porous SiC membrane |
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