A novel single poly-silicon EEPROM using trench floating gate

A single poly-silicon trench gate-type EEPROM, SPTG, featuring low voltage operation and fast programming is proposed. Using a trench floating gate instead of the stack gate structure, this cell is suitable for embedded application. The trenched floating gate (FG) combining with a deep-N-well implan...

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Bibliographic Details
Main Authors: Meng-Yi Wu, Shin-Chang Feng, Ya-Chin King
Format: Conference Proceeding
Language:English
Subjects:
CMOS logic circuits
CMOS process
Electronic mail
EPROM
Implants
Laboratories
Logic programming
Low voltage
Silicon
Voltage control
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Description
Summary:A single poly-silicon trench gate-type EEPROM, SPTG, featuring low voltage operation and fast programming is proposed. Using a trench floating gate instead of the stack gate structure, this cell is suitable for embedded application. The trenched floating gate (FG) combining with a deep-N-well implanted region guarantees high coupling ratio for CHEI programming and source side FN erasing operation. This cell array in a NOR-type array features fast random access capacity and IIF/sup 2/ cell size.
ISSN:1087-4852
2576-9154
DOI:10.1109/MTDT.2005.13