Fabrication and characterization of 100-nm In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As double-gate HEMTs with two separate gate controls

In this letter, we demonstrate successful operation of 100-nm T-gates double-gate high electron mobility transistors with two separate gate controls (V/sub g1s/ /spl ne/ V/sub g2s/). These devices are fabricated by means of adhesive bonding technique using enzocyclocbutene polymer. The additional ga...

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Bibliographic Details
Published in:IEEE electron device letters 2005-09, Vol.26 (9), p.601-603
Main Authors: Wichmann, N., Duszynski, I., Wallart, X., Bollaert, S., Cappy, A.
Format: Article
Language:English
Subjects:
Benzocyclobutene (BCB)
Bonding
Cutoff frequency
double-gate (DG)
Electrodes
Fabrication
HEMTs
high electron mobility transistor (HEMT)
InP
Millimeter wave technology
Millimeter wave transistors
MODFETs
Polymers
Threshold voltage
transferred substrate
velocity modulation transistor (VMT)
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Summary:In this letter, we demonstrate successful operation of 100-nm T-gates double-gate high electron mobility transistors with two separate gate controls (V/sub g1s/ /spl ne/ V/sub g2s/). These devices are fabricated by means of adhesive bonding technique using enzocyclocbutene polymer. The additional gate enables the variation of the threshold voltage V/sub th/ in a wide range from -0.68 to -0.12V while keeping high cutoff frequency f/sub t/ of about 170 GHz and high maximum oscillation frequency f/sub max/ of about 200 GHz. These devices are considered as being very effective for millimeter-wave mixing applications and are promising devices for the fabrication of velocity modulation transistor (VMT) (Sakaki et al., 1982).
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2005.854353