Cu/ULK (k=2.0) integration for 45 nm node and below using an improved hybrid material with conventional BEOL processing and a late porogen removal

Conventional Cu-ULK integration schemes lead to a drastic increase of the dielectric constant due to porous material degradation during process steps. In this paper, a post-integration porogen removal approach is studied to overcome this issue. Material optimization is presented (k=2.0) allowing the...

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Main Authors: Jousseaume, V., Assous, M., Zenasni, A., Maitrejean, S., Remiat, B., Leduc, P., Trouve, H., Le Cornec, C., Fayolle, M., Roule, A., Ciaramella, F., Bouchu, D., David, T., Roman, A., Scevola, D., Morel, T., Rebiscoul, D., Prokopowicz, G., Jackman, M., Guedj, C., Louis, D., Gallagher, M., Passemard, G.
Format: Conference Proceeding
Language:English
Subjects:
Chemistry
Dielectric constant
Dielectric materials
Etching
Inorganic materials
Plasma applications
Plasma materials processing
Solids
Thermal degradation
Thermal stability
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Summary:Conventional Cu-ULK integration schemes lead to a drastic increase of the dielectric constant due to porous material degradation during process steps. In this paper, a post-integration porogen removal approach is studied to overcome this issue. Material optimization is presented (k=2.0) allowing the use of conventional BEOL integration processes such as oxygen-based etch chemistry, metal CVD barrier deposition and standard CMP process for dense low k. An integrated k value lower than 2.2 is obtained.
ISSN:2380-632X
2380-6338
DOI:10.1109/IITC.2005.1499923