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Cu/ULK (k=2.0) integration for 45 nm node and below using an improved hybrid material with conventional BEOL processing and a late porogen removal
Conventional Cu-ULK integration schemes lead to a drastic increase of the dielectric constant due to porous material degradation during process steps. In this paper, a post-integration porogen removal approach is studied to overcome this issue. Material optimization is presented (k=2.0) allowing the...
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| creator | Jousseaume, V. Assous, M. Zenasni, A. Maitrejean, S. Remiat, B. Leduc, P. Trouve, H. Le Cornec, C. Fayolle, M. Roule, A. Ciaramella, F. Bouchu, D. David, T. Roman, A. Scevola, D. Morel, T. Rebiscoul, D. Prokopowicz, G. Jackman, M. Guedj, C. Louis, D. Gallagher, M. Passemard, G. |
| description | Conventional Cu-ULK integration schemes lead to a drastic increase of the dielectric constant due to porous material degradation during process steps. In this paper, a post-integration porogen removal approach is studied to overcome this issue. Material optimization is presented (k=2.0) allowing the use of conventional BEOL integration processes such as oxygen-based etch chemistry, metal CVD barrier deposition and standard CMP process for dense low k. An integrated k value lower than 2.2 is obtained. |
| doi_str_mv | 10.1109/IITC.2005.1499923 |
| format | conference_proceeding |
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| identifier | ISSN: 2380-632X |
| ispartof | Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005, 2005, p.60-62 |
| issn | 2380-632X 2380-6338 |
| language | eng |
| recordid | cdi_ieee_primary_1499923 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Chemistry Dielectric constant Dielectric materials Etching Inorganic materials Plasma applications Plasma materials processing Solids Thermal degradation Thermal stability |
| title | Cu/ULK (k=2.0) integration for 45 nm node and below using an improved hybrid material with conventional BEOL processing and a late porogen removal |
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