New parameter extraction method for the simulation of the space charge created by Fowler-Nordheim electron injections in the gate oxide of MOS devices

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Bibliographic Details
Main Authors: Auriel, G., Dubuc, J.P., Sagnes, B., Oualid, J., Ghibaudo, G., Boivin, P.
Format: Conference Proceeding
Language:English
Subjects:
Electron traps
Integrated circuit reliability
Microelectronics
MOS capacitors
MOS devices
Nonvolatile memory
Occupational stress
Parameter extraction
Space charge
Substrates
Online Access:Request full text
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DOI:10.1109/ESSDERC.1997.194510