Electrical characterisation of n and p-channel SiGe MOSFETs with gate oxides formed by plasma oxidation

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Bibliographic Details
Main Authors: Riley, L.S., Hall, S., Zhang, J., Gallas, B., Evans, A.G.R.
Format: Conference Proceeding
Language:English
Subjects:
Capacitive sensors
Consumer electronics
Fabrication
Germanium silicon alloys
Heterojunctions
MOSFETs
Oxidation
Plasma materials processing
Plasma temperature
Silicon germanium
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DOI:10.1109/ESSDERC.2000.194809