Direct Extraction of Intrinsic Excess Phase Shift Time Constants in SiGe HBTs

Saved in:
Bibliographic Details
Main Authors: Hamel, J.S., Leach, G.R., Anteney, I.M.
Format: Conference Proceeding
Language:English
Subjects:
Bipolar transistors
Computer science
Data mining
Equivalent circuits
Frequency
Germanium silicon alloys
Heterojunction bipolar transistors
Parasitic capacitance
Scattering parameters
Silicon germanium
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary: