Direct Extraction of Intrinsic Excess Phase Shift Time Constants in SiGe HBTs

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Main Authors: Hamel, J.S., Leach, G.R., Anteney, I.M.
Format: Conference Proceeding
Language:English
Subjects:
Bipolar transistors
Computer science
Data mining
Equivalent circuits
Frequency
Germanium silicon alloys
Heterojunction bipolar transistors
Parasitic capacitance
Scattering parameters
Silicon germanium
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creator Hamel, J.S.
Leach, G.R.
Anteney, I.M.
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identifier ISBN: 9782863322451
ispartof 29th European Solid-State Device Research Conference, 1999, Vol.1, p.456-459
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Bipolar transistors
Computer science
Data mining
Equivalent circuits
Frequency
Germanium silicon alloys
Heterojunction bipolar transistors
Parasitic capacitance
Scattering parameters
Silicon germanium
title Direct Extraction of Intrinsic Excess Phase Shift Time Constants in SiGe HBTs
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