100GHz SiGe:C HBTs using non selective base epitaxy

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Bibliographic Details
Main Authors: Martinet, B., Baudry, H., Kermarrec, O., Campidelli, Y., Laurens, M., Marty, M., Schwartzmann, T., Monroy, A., Bensahel, D., Chantre, A.
Format: Conference Proceeding
Language:English
Subjects:
Doping
Epitaxial growth
Fabrication
Frequency
Germanium silicon alloys
Heterojunction bipolar transistors
Implants
Silicon carbide
Silicon germanium
Wireless communication
Online Access:Request full text
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DOI:10.1109/ESSDERC.2001.195210