Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectric

New findings of interface trap passivation effect in negative bias temperature instability (NBTI) measurement for p-MOSFETs with SiON gate dielectric are reported. We show evidence to clarify the recent debate: the recovery of V/sub th/ shift in the passivation phase of the dynamic NBTI is mainly du...

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Bibliographic Details
Published in:IEEE electron device letters 2005-10, Vol.26 (10), p.758-760
Main Authors: Yang, T., Shen, C., Li, M.F., Ang, C.H., Zhu, C.X., Yeo, Y.-C., Samudra, G., Kwong, D.-L.
Format: Article
Language:English
Subjects:
Applied sciences
Bias
Capacitance measurement
Current measurement
Density
Density measurement
Dielectric measurements
Dielectrics
Electronics
Exact sciences and technology
Gates
Measurement methods
MOSFET circuits
MOSFETs
Negative bias temperature instability
negative bias temperature instability (NBTI)
Niobium base alloys
Niobium compounds
Passivation
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon oxynitride
Silicon oxynitride (SiON)
Temperature measurement
Titanium compounds
Transistors
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Summary:New findings of interface trap passivation effect in negative bias temperature instability (NBTI) measurement for p-MOSFETs with SiON gate dielectric are reported. We show evidence to clarify the recent debate: the recovery of V/sub th/ shift in the passivation phase of the dynamic NBTI is mainly due to passivation of interface traps (N/sub it/), not due to hole de-trapping in dielectric hole traps (N/sub ot/). The conventional interface trap measurement methods, dc capacitance-voltage and charge pumping, seriously underestimate the trap density N/sub it/. This underestimation is gate bias dependent during measurement, because of the accelerated interface trap passivation under positive gate bias. Due to this new finding, many of previous reliability studies of p-MOSFETs should be re-investigated.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2005.855419