Advanced patterning solutions for self-aligned MOS structures in flash memory

The self-aligned MOS (SMS) structure in flash memory is a complex stack that requires novel patterning solutions. For the 90-nm node, we were able to implement an industry-leading 193-nm lithography process. At the 65-nm node, technical constraints drove a significant process flow change which incor...

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Bibliographic Details
Main Authors: Yeh, E.K., Howard, B.J., McGarvey, G., Hill, E., Freidjung, I., Lane, M.
Format: Conference Proceeding
Language:English
Subjects:
Coatings
Dielectrics
Etching
Flash memory
Isolation technology
Lithography
Manufacturing industries
Resists
Silicon
Surfaces
Online Access:Request full text
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Summary:The self-aligned MOS (SMS) structure in flash memory is a complex stack that requires novel patterning solutions. For the 90-nm node, we were able to implement an industry-leading 193-nm lithography process. At the 65-nm node, technical constraints drove a significant process flow change which incorporates an enhanced hardmask (EHM) layer. The benefit realized from this change is a wider process window for both lithography and etch.
ISSN:1523-553X
DOI:10.1109/ISSM.2005.1513400