A high efficiency, high voltage, balanced cascode FET

A high efficiency, high operating voltage GaAs HFET is presented. A balanced cascode circuit without RF feedback, which achieves the high PAE of 78.2% at 2.1GHz, is proposed. The optimization of a balance capacitor is analyzed theoretically and proved experimentally. This result contributes to the d...

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Bibliographic Details
Main Authors: Inoue, A., Goto, S., Kunii, T., Ishikawa, T., Matsuda, Y.
Format: Conference Proceeding
Language:English
Subjects:
Breakdown voltage
Capacitors
Feedback circuits
FETs
Gallium arsenide
HEMTs
High power amplifiers
MODFETs
Radio frequency
Radiofrequency amplifiers
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Summary:A high efficiency, high operating voltage GaAs HFET is presented. A balanced cascode circuit without RF feedback, which achieves the high PAE of 78.2% at 2.1GHz, is proposed. The optimization of a balance capacitor is analyzed theoretically and proved experimentally. This result contributes to the design of high voltage power amplifiers with low breakdown voltage transistors.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2005.1516694