An improved packaging technology for RF power transistors

This paper presents an improved packaging technology for RF power transistors that is beryllia-free and which halves the thermal resistance compared with the conventional approach. This new technology also reduces the source inductance and increases the gain.

Saved in:
Bibliographic Details
Main Authors: McCarthy, S., Smith, P., Walker, J., Padfield, N.
Format: Conference Proceeding
Language:English
Subjects:
Conducting materials
Flanges
Inductance
Packaging
Power MOSFET
Power transistors
Radio frequency
Silicon
Thermal conductivity
Thermal resistance
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This paper presents an improved packaging technology for RF power transistors that is beryllia-free and which halves the thermal resistance compared with the conventional approach. This new technology also reduces the source inductance and increases the gain.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2005.1516841