Post-growth quantum well intermixing and hydrogen passivation for fabricating extended cavity lasers on InP with improved performance

This paper describes the fabrication of extended cavity lasers (ECLs) with improved performance in InGaAs/InGaAsP/InP multiple quantum wells (MQWs) materials using a combination of quantum well intermixing (QWI) and dopant or defect passivation by atomic hydrogen (PAH).

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Bibliographic Details
Main Authors: Rao, E.V.K., Theys, B., Qiu, B.C., Bryce, A.C., Marsh, J.H.
Format: Conference Proceeding
Language:English
Subjects:
Atom lasers
Atomic beams
Hydrogen
Indium gallium arsenide
Indium phosphide
Optical device fabrication
Optical materials
Passivation
Quantum well devices
Quantum well lasers
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Description
Summary:This paper describes the fabrication of extended cavity lasers (ECLs) with improved performance in InGaAs/InGaAsP/InP multiple quantum wells (MQWs) materials using a combination of quantum well intermixing (QWI) and dopant or defect passivation by atomic hydrogen (PAH).
ISSN:1092-8669
DOI:10.1109/ICIPRM.2005.1517413