Evolution of composition modulations in InGaAs/InGaAsP quantum well structures due to quantum well intermixing

The presence of the composition modulation affects the quality of thin films and their optical properties. This paper reports on TEM observations of compositional modulations that take place during rapid thermal annealing (RTA) in structures involving InGaAs QWs with InGaAsP barriers with identical...

Full description

Saved in:
Bibliographic Details
Main Authors: Hulko, O., Thompson, D.A., Lee, A.S.W., Simmons, J.G.
Format: Conference Proceeding
Language:English
Subjects:
Anisotropic magnetoresistance
Annealing
Composite materials
Gallium arsenide
Geometrical optics
Indium gallium arsenide
Molecular beam epitaxial growth
Photoluminescence
Temperature
Transistors
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The presence of the composition modulation affects the quality of thin films and their optical properties. This paper reports on TEM observations of compositional modulations that take place during rapid thermal annealing (RTA) in structures involving InGaAs QWs with InGaAsP barriers with identical In/Ga ratio. A similar compositional behavior was also observed by high resolution X-ray diffraction and photoluminescence measurements.
ISSN:1092-8669
DOI:10.1109/ICIPRM.2005.1517450