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MOCVD process modeling using in-situ reflectance test structure measurements for process control improvement
Process control methodology based on in-situ reflectance measurements can be used with a process model to reduce calibration runs in the development and manufacture of InGaAlAs lasers and modulators.
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creator | Ebert, C. Bond, A. Levkoff, J. Seiler, J. Wanamaker, C. |
description | Process control methodology based on in-situ reflectance measurements can be used with a process model to reduce calibration runs in the development and manufacture of InGaAlAs lasers and modulators. |
doi_str_mv | 10.1109/ICIPRM.2005.1517461 |
format | conference_proceeding |
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Bond, A. ; Levkoff, J. ; Seiler, J. ; Wanamaker, C.</creator><creatorcontrib>Ebert, C. ; Bond, A. ; Levkoff, J. ; Seiler, J. ; Wanamaker, C.</creatorcontrib><description>Process control methodology based on in-situ reflectance measurements can be used with a process model to reduce calibration runs in the development and manufacture of InGaAlAs lasers and modulators.</description><identifier>ISSN: 1092-8669</identifier><identifier>ISBN: 9780780388918</identifier><identifier>ISBN: 0780388917</identifier><identifier>DOI: 10.1109/ICIPRM.2005.1517461</identifier><language>eng</language><publisher>IEEE</publisher><subject>Composite materials ; Gallium arsenide ; Indium phosphide ; Inductors ; MOCVD ; Optical feedback ; Optical materials ; Process control ; Reflectivity ; Testing</subject><ispartof>International Conference on Indium Phosphide and Related Materials, 2005, 2005, p.219-222</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1517461$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54555,54920,54932</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1517461$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Ebert, C.</creatorcontrib><creatorcontrib>Bond, A.</creatorcontrib><creatorcontrib>Levkoff, J.</creatorcontrib><creatorcontrib>Seiler, J.</creatorcontrib><creatorcontrib>Wanamaker, C.</creatorcontrib><title>MOCVD process modeling using in-situ reflectance test structure measurements for process control improvement</title><title>International Conference on Indium Phosphide and Related Materials, 2005</title><addtitle>ICIPRM</addtitle><description>Process control methodology based on in-situ reflectance measurements can be used with a process model to reduce calibration runs in the development and manufacture of InGaAlAs lasers and modulators.</description><subject>Composite materials</subject><subject>Gallium arsenide</subject><subject>Indium phosphide</subject><subject>Inductors</subject><subject>MOCVD</subject><subject>Optical feedback</subject><subject>Optical materials</subject><subject>Process control</subject><subject>Reflectivity</subject><subject>Testing</subject><issn>1092-8669</issn><isbn>9780780388918</isbn><isbn>0780388917</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2005</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNo9kNtKxDAYhAMquK77BHuTF2jNoWmTS6mHLeyyIurtksNfifSwJKng21t1EYYZGD7mYhBaU5JTStRNUzdPz7ucESJyKmhVlPQMrVQlySwupaLyHC1mkmWyLNUluorxg8x0xeQCdbt9_XaHj2G0ECPuRwedH97xFH_cD1n0acIB2g5s0oMFnCAmHFOYbJoC4B50nLOHIUXcjuF_yo5DCmOHfT83n7_ANbpodRdhdcolen24f6k32Xb_2NS328zTSqRMGsuNEkIaR4ywlIORvHKcM8eVLK0TjOpKtE5xEKCI5gVrBVHCWF0o4fgSrf92PQAcjsH3OnwdTufwb9CMW8w</recordid><startdate>2005</startdate><enddate>2005</enddate><creator>Ebert, C.</creator><creator>Bond, A.</creator><creator>Levkoff, J.</creator><creator>Seiler, J.</creator><creator>Wanamaker, C.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2005</creationdate><title>MOCVD process modeling using in-situ reflectance test structure measurements for process control improvement</title><author>Ebert, C. ; Bond, A. ; Levkoff, J. ; Seiler, J. ; Wanamaker, C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-8bc3b9558bd0b5c13eb837d332d3986cd521a75fd93e5e90a342f5095bca495d3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Composite materials</topic><topic>Gallium arsenide</topic><topic>Indium phosphide</topic><topic>Inductors</topic><topic>MOCVD</topic><topic>Optical feedback</topic><topic>Optical materials</topic><topic>Process control</topic><topic>Reflectivity</topic><topic>Testing</topic><toplevel>online_resources</toplevel><creatorcontrib>Ebert, C.</creatorcontrib><creatorcontrib>Bond, A.</creatorcontrib><creatorcontrib>Levkoff, J.</creatorcontrib><creatorcontrib>Seiler, J.</creatorcontrib><creatorcontrib>Wanamaker, C.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEL</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ebert, C.</au><au>Bond, A.</au><au>Levkoff, J.</au><au>Seiler, J.</au><au>Wanamaker, C.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>MOCVD process modeling using in-situ reflectance test structure measurements for process control improvement</atitle><btitle>International Conference on Indium Phosphide and Related Materials, 2005</btitle><stitle>ICIPRM</stitle><date>2005</date><risdate>2005</risdate><spage>219</spage><epage>222</epage><pages>219-222</pages><issn>1092-8669</issn><isbn>9780780388918</isbn><isbn>0780388917</isbn><abstract>Process control methodology based on in-situ reflectance measurements can be used with a process model to reduce calibration runs in the development and manufacture of InGaAlAs lasers and modulators.</abstract><pub>IEEE</pub><doi>10.1109/ICIPRM.2005.1517461</doi><tpages>4</tpages></addata></record> |
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identifier | ISSN: 1092-8669 |
ispartof | International Conference on Indium Phosphide and Related Materials, 2005, 2005, p.219-222 |
issn | 1092-8669 |
language | eng |
recordid | cdi_ieee_primary_1517461 |
source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Composite materials Gallium arsenide Indium phosphide Inductors MOCVD Optical feedback Optical materials Process control Reflectivity Testing |
title | MOCVD process modeling using in-situ reflectance test structure measurements for process control improvement |
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