Post-growth bandgap engineering in InP

We report novel quantum-well intermixing techniques that allow multiple bandgaps to be generated on a single InP substrate or device. The proposed processes are suitable for the manufacture of monolithically integrated optoelectronic devices and circuits

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Bibliographic Details
Main Authors: Yanson, D.A., Kowalski, O.P., McDougall, S.D., Marsh, J.H.
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Gallium arsenide
Indium phosphide
Integrated circuit manufacture
Manufacturing processes
Photonic band gap
Plasma temperature
Silicon compounds
Sputtering
Substrates
Online Access:Request full text
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Description
Summary:We report novel quantum-well intermixing techniques that allow multiple bandgaps to be generated on a single InP substrate or device. The proposed processes are suitable for the manufacture of monolithically integrated optoelectronic devices and circuits
ISSN:1092-8669
DOI:10.1109/ICIPRM.2005.1517543