Liquid phase oxidation on InGaP and its application to InGaP/GaAs HBTs surface passivation

A liquid phase oxidation to grow native oxide film on InGaP near room temperature is investigated and characterized. The application as the surface passivation to improve the InGaP/GaAs heterojunction bipolar transistors (HBTs) performance is also demonstrated. In this work, the HBT devices with sur...

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Bibliographic Details
Main Authors: Kuan-Wei Lee, Nan-Ying Yang, Kai-Lin Lee, Po-Wen Sze, Mau-Phon Houng, Yeong-Her Wang
Format: Conference Proceeding
Language:English
Subjects:
Chemicals
Etching
Gallium arsenide
HEMTs
Heterojunction bipolar transistors
Indium gallium arsenide
Microelectronics
MODFETs
Oxidation
Passivation
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Summary:A liquid phase oxidation to grow native oxide film on InGaP near room temperature is investigated and characterized. The application as the surface passivation to improve the InGaP/GaAs heterojunction bipolar transistors (HBTs) performance is also demonstrated. In this work, the HBT devices with surface passivation by the native oxide exhibit 700% improvement in current gain at low collector current regimes by the reduction of surface recombination current, as compared to those without surface passivation. In addition, a larger breakdown voltage (23.5 V) and a lower base recombination current (10 -12 A) are also obtained
ISSN:1092-8669
DOI:10.1109/ICIPRM.2005.1517546